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IDDQ Testing for Deep-Submicron ICs: Challenges and Solutions
March/April 2002 (vol. 19 no. 2) pp. 24-33
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The use of low-threshold devices in scaled low-voltage CMOS circuits leads to increased intrinsic leakage current. As a result, IDDQ testing requires different techniques to remain effective.

Citation:
Zhanping Chen, Liqiong Wei, Ali Keshavarzi, Kaushik Roy, "IDDQ Testing for Deep-Submicron ICs: Challenges and Solutions," IEEE Design and Test of Computers, vol. 19, no. 2, pp. 24-33, Mar/Apr, 2002
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