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Amplification of Space Charge Waves in Strained Si/SiGe Heterostructure at 77 K

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/CONIELECOMP.2006.10

16th International Conference on Elec ...

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	ASCII Text	x
	Abel B Garcia, Volodymyr Grimalsky, Edmundo D. Gutierrez, "Amplification of Space Charge Waves in Strained Si/SiGe Heterostructure at 77 K," Electronics, Communications, and Computers, International Conference on, vol. 0, no. 0, pp. 37, 16th International Conference on Electronics, Communications and Computers (CONIELECOMP'06), 2006.

	BibTex	x
	@article{ 10.1109/CONIELECOMP.2006.10, author = {Abel B Garcia and Volodymyr Grimalsky and Edmundo D. Gutierrez}, title = {Amplification of Space Charge Waves in Strained Si/SiGe Heterostructure at 77 K}, journal ={Electronics, Communications, and Computers, International Conference on}, volume = {0}, year = {2006}, isbn = {}, pages = {37}, doi = {http://doi.ieeecomputersociety.org/10.1109/CONIELECOMP.2006.10}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Electronics, Communications, and Computers, International Conference on TI - Amplification of Space Charge Waves in Strained Si/SiGe Heterostructure at 77 K SN - SP EP A1 - Abel B Garcia, A1 - Volodymyr Grimalsky, A1 - Edmundo D. Gutierrez, PY - 2006 KW - null VL - 0 JA - Electronics, Communications, and Computers, International Conference on ER -

Abel B Garcia, Department of Electronics, INAOE, Puebla,Pue., Mexico

Volodymyr Grimalsky, Department of Electronics, INAOE, Puebla,Pue., Mexico

Edmundo D. Gutierrez, INTEL-SRCM, Guadalajara, Mexico

We have shown by simulations a possibility of amplification of space charge waves in strained Si/SiGe heterostructure at 77 K, using the negative differential conductivity phenomenon. In this work we also have done a comparison between the n-GaAs thin film and strained Si/SiGe heterostructure with respect to the propagation of space charge waves. We have obtained that the amplification for signals with frequency f\le40 GHz in strained Si/SiGe heterostructure is possible, however in an n-GaAs thin film this is possible up to f\le50 GHz at 300 K [5], but Si/SiGe is compatible with Si-based technology.

Citation:

Abel B Garcia, Volodymyr Grimalsky, Edmundo D. Gutierrez, "Amplification of Space Charge Waves in Strained Si/SiGe Heterostructure at 77 K," conielecomp,pp.37, 16th International Conference on Electronics, Communications and Computers (CONIELECOMP'06), 2006

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