2016 IEEE International Symposium on Workload Characterization (IISWC)
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Abstract

The paper deals with dynamic supply current (iddt) test method, where several parameters of the iddt waveform have been monitored. Simulations were performed on two 64-bit SRAM circuits, in which resistive open defects were investigated. The technologies used were 0.35 μm and 90 nm CMOS. The efficiency of iddt test in covering open defects for both technologies was evaluated.
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