Abstract
IDDQ test is a valuable test method for semiconductor manufacturers. However, its effectiveness is reduced for deep sub-micron technology chips due to rising background leakage. Current two test methods that promise to extend the life of IDDQ test are Current Ratio and Delta-IDDQ. Although several studies have been reported on these methods, their effectiveness in detecting defects has not been contrasted. In this work, we compare these two methods using industrial test data.