Novel DRAM mitigation technique

A. Bougerol; F. Miller; N. Buard

doi:10.1109/IOLTS.2009.5195991

2009 15th IEEE International On-Line Testing Symposium (IOLTS 2009)

Novel DRAM mitigation technique

Year: 2009, Pages: 109-113

DOI Bookmark: 10.1109/IOLTS.2009.5195991

Authors

A. Bougerol, EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
F. Miller, EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
N. Buard, EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France

Abstract

This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/ MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.

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Novel DRAM mitigation technique

Authors

Abstract

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