2013 IEEE 31st VLSI Test Symposium (VTS)
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Abstract

Use of Nand Flash memory in storage devices is increasing at an exponential rate. As the technology feature size shrink, the reliability and endurance for the Nand device reduces. Currently Nand devices can have more than 258Gb cells. Testing such devices is not a trivial proposition. In this presentation we will discuss the failure modes for Nand flash, the test methods used and the challenges that we face.
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